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SI4599DY-T1-GE3
Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 6.8 A, 6.8 A, 0.0355 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4599DY-T1-GE3Copy
Manufacturer Standard Lead Time38 weeks
Newark Part No.
Full Reel86AK6298
Re-Reel55R1926RL
Cut Tape55R1926
Your Part Number
351 In Stock
20,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.600 | $1.60 |
| Total Price | $1.60 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.600 |
| 50+ | $0.749 |
| 100+ | $0.666 |
| 250+ | $0.592 |
| 500+ | $0.518 |
| 1000+ | $0.508 |
| 2500+ | $0.497 |
| 5000+ | $0.487 |
Full Reel
| Quantity | Price |
|---|---|
| 2500+ | $0.057 |
| 5000+ | $0.056 |
| 10000+ | $0.053 |
| 20000+ | $0.050 |
| 30000+ | $0.048 |
| 50000+ | $0.046 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4599DY-T1-GE3Copy
Manufacturer Standard Lead Time38 weeks
Newark Part No.
Full Reel86AK6298
Re-Reel55R1926RL
Cut Tape55R1926
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel40V
Continuous Drain Current Id6.8A
Drain Source Voltage Vds40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel6.8A
Continuous Drain Current Id P Channel6.8A
Drain Source On State Resistance N Channel0.0355ohm
Drain Source On State Resistance P Channel0.045ohm
No. of Pins8Pins
Power Dissipation N Channel3W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Product Overview
The SI4599DY-T1-GE3 is a 40V Dual N and P-channel TrenchFET® Power MOSFET. Suitable for backlight inverter for LCD display and full bridge converter applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
- 100% UIS Tested
Technical Specifications
Channel Type
Complementary N and P Channel
Continuous Drain Current Id
6.8A
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id P Channel
6.8A
Drain Source On State Resistance P Channel
0.045ohm
Power Dissipation N Channel
3W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds N Channel
40V
Drain Source Voltage Vds
40V
Continuous Drain Current Id N Channel
6.8A
Drain Source On State Resistance N Channel
0.0355ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate