AFBR-S4N44P163

AFBR-S4N44P163 is a 4×4 NUV-HD silicon photo multiplier array. It is used for ultra-sensitive precision measurements of single photons. The pitch of SiPMs is 4mm in both directions. High packing density of the single chips is achieved using through-silicon-via (TSV) technology. Larger areas can be covered with a pitch of 16mm by tiling multiple AFBR-S4N44P163 arrays almost without any edge losses. The passivation layer is made by a glass highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity towards blue- and near-UV region of the light spectrum. Applications include X-ray and gamma ray detection, gamma ray spectroscopy, safety and security, nuclear medicine, positron emission tomography, life sciences, flow cytometry, fluorescence – luminescence measurements, time correlated single photon counting, high energy physics, astrophysics.

• High PDE of more than 55% at 420nm, high fill factors
• Excellent SPTR and CRT
• Excellent uniformity of breakdown voltage, 180mV (3 sigma)
• Excellent uniformity of gain
• With TSV technology (4-side tilable)
• Size 15.9 × 15.9mm², cell pitch 30 × 30μm²
• Highly transparent glass protection layer
• Operating temperature range from -20°C to +50°C
• Spectral range from 300 to 900nm, peak sensitivity wavelength is 420nm
• 26.9V breakdown voltage, 26mV/K temperature coefficient of breakdown voltage