HMC8412TCPZ-EP-PT

HMC8412TCPZ-EP is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband amplifier. It also features inputs and outputs that are internally matched to 50 ohm, making the device ideal for surface-mount technology (SMT)-based, high capacity microwave radio applications. Typical applications are test instrumentation, telecommunications, military radar and communication, electronic warfare, aerospace.

• Single positive supply (self biased), controlled manufacturing baseline
• Supports defense and aerospace applications (AQEC standard)
• 1 assembly/test site, 1 fabrication site, product change notification
• Frequency range from 0.4 to 3GHz (VDD=5V, supply current (IDQ)=60mA, RBIAS=1.47Kohm and TA=25°C)
• Gain variation over temperature is 0.005dB/°C typ (VDD=5V, IDQ=60mA, RBIAS=1.47Kohm and TA=25°C)
• Gain is 15.5dB typ (VDD=5V, supply current (IDQ)=60mA, RBIAS=1.47Kohm and TA=25°C)
• Power added efficiency (PAE) is 28% typ (measured at PSAT)
• 6-lead frame chip scale package [LFCSP]
• Temperature rating range from −55°C to +125°C

Notes

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party