AS4C16M16SA-6TIN

AS4C16M16SA-6TIN 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to SDRAM are burst-oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a read or write command. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. By having a programmable mode register, the system can choose most suitable modes to maximize its performance. It is well suited for applications requiring high memory bandwidth and particularly well suited to high-performance PC applications.

• Fast access time from clock: 5/5.4ns, fully synchronous operation
• Internal pipelined architecture, 4M word x 16-bit x 4-bank
• Programmable mode registers, CAS latency: 2 or 3, burst length: 1, 2, 4, 8, or full page
• Burst type: sequential or interleaved, burst stop function
• Auto refresh and self refresh, 8192 refresh cycles/64ms
• CKE power down mode, LVTTL interface
• Single +3.3V ±0.3V power supply
• 166MHz frequency
• 54 pin TSOP II package
• Industrial temperature range from -40 to 85°C