Print Page
CM600DY-12NF
IGBT Module, Dual [Half Bridge], 600 A, 2.2 V, 1.13 kW, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM600DY-12NF
Newark Part No.88K1880
Product RangeNF Series
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 20 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM600DY-12NF
Newark Part No.88K1880
Product RangeNF Series
Technical Datasheet
Transistor PolarityN Channel
IGBT ConfigurationDual [Half Bridge]
DC Collector Current600A
Continuous Collector Current600A
Collector Emitter Saturation Voltage2.2V
Collector Emitter Saturation Voltage Vce(on)600V
Power Dissipation Pd1.13kW
Power Dissipation1.13kW
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo600V
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
IGBT TerminationTab
No. of Pins7Pins
Collector Emitter Voltage Max600V
IGBT TechnologyIGBT 5 [Trench Gate]
Transistor MountingPanel
Product RangeNF Series
SVHCTo Be Advised
Product Overview
The CM600DY-12NF is a 600V Dual IGBTMOD™ NF-series Module designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
- Low drive power
- Low VCE (sat)
- Discrete super-fast recovery free-wheel diode
- ±20V Gate-emitter voltage (C-E short)
- 1200A Peak collector current
- 600A Emitter current
Applications
Motor Drive & Control, Power Management
Technical Specifications
Transistor Polarity
N Channel
DC Collector Current
600A
Collector Emitter Saturation Voltage
2.2V
Power Dissipation Pd
1.13kW
Operating Temperature Max
150°C
Junction Temperature, Tj Max
150°C
IGBT Termination
Tab
Collector Emitter Voltage Max
600V
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
600A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation
1.13kW
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
Module
No. of Pins
7Pins
IGBT Technology
IGBT 5 [Trench Gate]
Product Range
NF Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate