Print Page
BFG591,115
Bipolar - RF Transistor, Wideband, NPN, 15 V, 7 GHz, 2 W, 200 mA, SOT-223
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNXP
Manufacturer Part NoBFG591,115
Newark Part No.75R4631
Your Part Number
Technical Datasheet
Packaging Options
No Longer Available
Product Information
ManufacturerNXP
Manufacturer Part NoBFG591,115
Newark Part No.75R4631
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo15V
Collector Emitter Voltage Max15V
Transition Frequency7GHz
Power Dissipation Pd2W
Power Dissipation2W
Continuous Collector Current200mA
DC Collector Current200mA
Transistor Case StyleSOT-223
DC Current Gain hFE90hFE
RF Transistor CaseSOT-223
No. of Pins3Pins
DC Current Gain hFE Min90hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
15V
Power Dissipation Pd
2W
Continuous Collector Current
200mA
Transistor Case Style
SOT-223
RF Transistor Case
SOT-223
DC Current Gain hFE Min
90hFE
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Collector Emitter Voltage V(br)ceo
15V
Transition Frequency
7GHz
Power Dissipation
2W
DC Collector Current
200mA
DC Current Gain hFE
90hFE
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Qualification
-
MSL
-
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate