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SI4922BDY-T1-GE3
Dual MOSFET, Dual N Channel, 30 V, 8 A, 0.016 ohm
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No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4922BDY-T1-GE3Copy
Newark Part No.26R1898
Technical Datasheet
Channel TypeDual N Channel
Continuous Drain Current Id8A
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel-
Drain Source Voltage Vds30V
Continuous Drain Current Id N Channel8A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.016ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel-
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (10-Jun-2022)
Technical Specifications
Channel Type
Dual N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds
30V
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
8A
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
8A
Drain Source On State Resistance N Channel
0.016ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (10-Jun-2022)
Technical Docs (3)
Legislation and Environmental
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate