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SIA108DJ-T1-GE3
MOSFET, N-CH, 80V, 12A, 150DEG C, 19W
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIA108DJ-T1-GE3
Newark Part No.06AH4234
Product RangeTrenchFET Gen IV
Your Part Number
Technical Datasheet
12,653 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.340 |
| 25+ | $1.100 |
| 100+ | $0.712 |
| 500+ | $0.591 |
| 1000+ | $0.467 |
| 2500+ | $0.446 |
| 10000+ | $0.429 |
| 25000+ | $0.421 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.34
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA108DJ-T1-GE3
Newark Part No.06AH4234
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id12A
Drain Source On State Resistance0.032ohm
On Resistance Rds(on)0.032ohm
Transistor Case StylePowerPAK SC-70
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation19W
Power Dissipation Pd19W
No. of Pins6Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
SVHCNo SVHC (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.032ohm
Transistor Case Style
PowerPAK SC-70
Rds(on) Test Voltage
10V
Power Dissipation
19W
No. of Pins
6Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
12A
On Resistance Rds(on)
0.032ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
19W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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