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ManufacturerVISHAY
Manufacturer Part NoSI7149DP-T1-GE3
Newark Part No.74R0230
Your Part Number
Technical Datasheet
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7149DP-T1-GE3
Newark Part No.74R0230
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id50A
Drain Source On State Resistance5200µohm
On Resistance Rds(on)0.0042ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd69W
Gate Source Threshold Voltage Max1.2V
Power Dissipation69W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
Product Overview
The SI7149DP-T1-GE3 is a -30V P-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The P-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and with the capability to handle 85A.
- Halogen-free according to IEC 61249-2-21 definition
- 100% UIS Tested
Applications
Power Management, Consumer Electronics, Computers & Computer Peripherals
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
5200µohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
50A
On Resistance Rds(on)
0.0042ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
69W
Power Dissipation
69W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate