STMICROELECTRONICS  ULN2803A  Bipolar (BJT) Array Transistor, Darlington, NPN, 50 V, 2.25 W, 500 mA, 1000, DIP

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Product Information

  • Collector Emitter Voltage V(br)ceo: 50V
  • DC Collector Current: 500mA
  • DC Current Gain hFE: 1000
  • MSL: -
  • No. of Pins: 18
  • Operating Temperature Max: 85°C
  • Operating Temperature Min: -20°C
  • Power Dissipation Pd: 2.25W
  • SVHC: To Be Advised
  • Transistor Case Style: DIP
  • Transistor Polarity: NPN


The ULN2803A from STMicroelectronics is a through hole eight darlington array in DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features a peak load current rating of 600mA (500mA continuous) and can withstand at least 50V in the OFF state. ULN2803A has a 2.7Kohm input resistor for 5V TTL and CMOS to simplify logic families interfacing.


  • Inputs pinned opposite to outputs to simplify board layout
  • Outputs may be paralleled for higher current capability
  • Integral suppression diodes
  • Output voltage of 50V
  • DC current gain (hFE) of 1000
  • Operating ambient temperature range from -20°C to 85°C
  • Power dissipation (Pd) is 2.25W


  • Power Management
  • Consumer Electronics
  • Portable Devices
  • Industrial

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Bipolar (BJT) Array Transistor, Darlington, NPN, 50 V, 500 mA, DIP

DARLINGTON TRANSISTOR ARRAY, NPN, 8, 50V, DIP; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:-; DC Collector Current:500mA; DC Current Gain hFE:-; No. of Pins:18; Operating Temperature Max:85 C;RoHS Compliant: Yes


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