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| Quantity | Price |
|---|---|
| 1+ | $1.020 |
| 10+ | $0.806 |
| 25+ | $0.725 |
| 50+ | $0.645 |
| 100+ | $0.563 |
| 250+ | $0.509 |
| 500+ | $0.454 |
| 1000+ | $0.376 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$5.10
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMN48XP,115
Newark Part No.47T2352
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.1A
Drain Source On State Resistance0.048ohm
On Resistance Rds(on)0.048ohm
Transistor Case StyleSOT-457
Transistor MountingSurface Mount
Power Dissipation Pd530mW
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation530mW
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The PMN48XP is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications.
- 1.8V RDS (ON) rated
- Very fast switching
- -55 to 150°C Junction temperature range
Applications
Power Management, Automation & Process Control, Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4.1A
On Resistance Rds(on)
0.048ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Power Dissipation
530mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.048ohm
Transistor Case Style
SOT-457
Power Dissipation Pd
530mW
Gate Source Threshold Voltage Max
1V
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability