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ManufacturerONSEMI
Manufacturer Part NoFQPF13N06L
Newark Part No.31Y1536
Your Part Number
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQPF13N06L
Newark Part No.31Y1536
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id10A
On Resistance Rds(on)0.088ohm
Drain Source On State Resistance0.088ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Power Dissipation Pd24W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation24W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead (17-Jan-2022)
Product Overview
The FQPF13N06L is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- 100% avalanche tested
- 4.8nC typical low gate charge
- 17pF typical low Crss
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.088ohm
Transistor Case Style
TO-220F
Power Dissipation Pd
24W
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
10A
Drain Source On State Resistance
0.088ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
24W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (17-Jan-2022)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (17-Jan-2022)
Download Product Compliance Certificate
Product Compliance Certificate