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ManufacturerONSEMI
Manufacturer Part NoFDT3N40TF
Newark Part No.31Y1415
Your Part Number
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDT3N40TF
Newark Part No.31Y1415
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds400V
Continuous Drain Current Id2A
On Resistance Rds(on)2.8ohm
Drain Source On State Resistance2.8ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Power Dissipation Pd2W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation2W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (17-Jan-2022)
Product Overview
The FDT3N40TF is an UniFET™ N-channel high voltage MOSFET produced based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- 100% avalanche tested
- 4.5nC typical low gate charge
- 3.7pF typical low Crss
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
400V
On Resistance Rds(on)
2.8ohm
Transistor Case Style
SOT-223
Power Dissipation Pd
2W
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
2A
Drain Source On State Resistance
2.8ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (17-Jan-2022)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (17-Jan-2022)
Download Product Compliance Certificate
Product Compliance Certificate