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XP2530AGY
MOSFET, N & P-CH, 30V, 3.3A, SOT-26
Image is for illustrative purposes only. Please refer to product description.
ManufacturerYAGEO XSEMI
Manufacturer Part NoXP2530AGYCopy
Manufacturer Standard Lead Time36 weeks
Newark Part No.70AK6950
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 36 week(s)
| Quantity | Price |
|---|---|
| 5+ | $0.554 |
| 10+ | $0.429 |
| 25+ | $0.360 |
| 50+ | $0.305 |
| 100+ | $0.258 |
| 250+ | $0.222 |
| 500+ | $0.184 |
| 1000+ | $0.159 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$2.77
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerYAGEO XSEMI
Manufacturer Part NoXP2530AGYCopy
Manufacturer Standard Lead Time36 weeks
Newark Part No.70AK6950
Channel TypeN and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel3.3A
Continuous Drain Current Id P Channel2.3A
Drain Source On State Resistance N Channel0.072ohm
Drain Source On State Resistance P Channel0.15ohm
Transistor Case StyleSOT-26
No. of Pins6Pins
Power Dissipation N Channel1.136W
Power Dissipation P Channel1.136W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
2.3A
Drain Source On State Resistance P Channel
0.15ohm
No. of Pins
6Pins
Power Dissipation P Channel
1.136W
Product Range
-
SVHC
To Be Advised
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
3.3A
Drain Source On State Resistance N Channel
0.072ohm
Transistor Case Style
SOT-26
Power Dissipation N Channel
1.136W
Operating Temperature Max
150°C
Qualification
-
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate