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PHE13003A,126
Bipolar (BJT) Single Transistor, NPN, 400 V, 1 A, 2.1 W, TO-92, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoPHE13003A,126
Newark Part No.81R3038
Your Part Number
No Longer Available
Product Information
ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoPHE13003A,126
Newark Part No.81R3038
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo400V
Collector Emitter Voltage Max400V
Continuous Collector Current1A
Power Dissipation2.1W
Power Dissipation Pd2.1W
DC Collector Current1A
DC Current Gain hFE20hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transistor Case StyleTO-92
Transition Frequency60Hz
DC Current Gain hFE Min20hFE
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (17-Dec-2015)
Product Overview
High voltage, high speed, planar passivated NPN power switching transistor.
- Fast switching
- High voltage capability of 700 V
Applications
Lighting
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
400V
Power Dissipation
2.1W
DC Collector Current
1A
Transistor Mounting
Through Hole
Transistor Case Style
TO-92
DC Current Gain hFE Min
20hFE
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
400V
Continuous Collector Current
1A
Power Dissipation Pd
2.1W
DC Current Gain hFE
20hFE
No. of Pins
3Pins
Transition Frequency
60Hz
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (17-Dec-2015)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate