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BUJ100LR,126
Bipolar (BJT) Single Transistor, NPN, 400 V, 1 A, 2 W, TO-92, Through Hole
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ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoBUJ100LR,126
Newark Part No.70R3348
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoBUJ100LR,126
Newark Part No.70R3348
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo400V
Collector Emitter Voltage Max400V
Continuous Collector Current1A
Transition Frequency-
Power Dissipation Pd2W
Power Dissipation2W
DC Collector Current1A
DC Current Gain hFE20hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transistor Case StyleTO-92
DC Current Gain hFE Min20hFE
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (17-Dec-2015)
Product Overview
400 V 1A 3-TO-92 NPN Power Transistor
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
400V
Transition Frequency
-
Power Dissipation
2W
DC Current Gain hFE
20hFE
No. of Pins
3Pins
DC Current Gain hFE Min
20hFE
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
400V
Continuous Collector Current
1A
Power Dissipation Pd
2W
DC Collector Current
1A
Transistor Mounting
Through Hole
Transistor Case Style
TO-92
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (17-Dec-2015)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate