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NVD5117PLT4G-VF01
MOSFET, P-CH, 60V, 61A, 175DEG C, 118W
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ManufacturerONSEMI
Manufacturer Part NoNVD5117PLT4G-VF01
Newark Part No.54AH9518
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $3.770 |
| 10+ | $2.470 |
| 25+ | $2.220 |
| 50+ | $1.980 |
| 100+ | $1.730 |
| 250+ | $1.620 |
| 500+ | $1.510 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVD5117PLT4G-VF01
Newark Part No.54AH9518
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id61A
Drain Source On State Resistance0.012ohm
On Resistance Rds(on)0.012ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation118W
Power Dissipation Pd118W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCLead (25-Jun-2025)
Product Overview
NVD5117PLT4G-VF01 is a single, P-channel, power MOSFET.
- Low RDS(on) to minimize conduction losses
- High current capability, avalanche energy specified
- AEC-Q101 qualified
- Continuous drain current is -61A at (TC = 25°C)
- Drain-to-source breakdown voltage is -60V minimum at (VGS = 0V, ID = -250µA)
- Gate-to-source leakage current is 100nA maximum at (VDS = 0V, VGS = 20V)
- Drain-to-source on resistance is 12mohm typical at (VGS = -10V, ID = -29A)
- Turn-on delay time is 22ns typical at (VGS = -4.5V, VDS = -48V, ID = -29A, RG = 2.5 ohm)
- Rise time is 195ns typical at (VGS = -4.5V, VDS = -48V, ID = -29A, RG = 2.5 ohm)
- Junction temperature range from -55°C to 175°C, DPAK package
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.012ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
118W
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
Lead (25-Jun-2025)
Transistor Polarity
P Channel
Continuous Drain Current Id
61A
On Resistance Rds(on)
0.012ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
118W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate