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TSHG5510
Infrared Emitter, High Speed, 830 nm, 38 °, T-1 3/4 (5mm), 15 mW/Sr, 15 ns, 15 ns
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No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoTSHG5510
Newark Part No.91R1760
Technical Datasheet
Peak Wavelength830nm
Angle of Half Intensity38°
Diode Case StyleT-1 3/4 (5mm)
Radiant Intensity (Ie)15mW/Sr
Rise Time15ns
Fall Time tf15ns
Forward Current If(AV)100mA
Forward Voltage VF Max1.45V
Operating Temperature Min-40°C
Operating Temperature Max85°C
Automotive Qualification Standard-
Product Range-
MSL-
SVHCNo SVHC (08-Jul-2021)
Product Overview
The TSHG5510 is a 830nm high speed Infrared Emitting Diode in GaAlAs double hetero (DH) technology with high radiant power, high speed and moulded in a clear. This diode is suitable for high pulse current operation. It is suitable for use in infrared radiation source for operation with CMOS cameras (illumination), high speed IR data transmission.
- High reliability
- High radiant intensity
- ±38° Angle of half sensitivity
- Low forward voltage
- Good spectral matching with Si photo-detectors
Technical Specifications
Peak Wavelength
830nm
Diode Case Style
T-1 3/4 (5mm)
Rise Time
15ns
Forward Current If(AV)
100mA
Operating Temperature Min
-40°C
Automotive Qualification Standard
-
MSL
-
Angle of Half Intensity
38°
Radiant Intensity (Ie)
15mW/Sr
Fall Time tf
15ns
Forward Voltage VF Max
1.45V
Operating Temperature Max
85°C
Product Range
-
SVHC
No SVHC (08-Jul-2021)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (08-Jul-2021)
Download Product Compliance Certificate
Product Compliance Certificate