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SUD50P04-08-GE3
PWR MOSFET, P CHANNEL, 40V, 50A
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSUD50P04-08-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.72R4258
Your Part Number
42,537 In Stock
8,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $1.870 |
| 10+ | $1.590 |
| 25+ | $1.500 |
| 50+ | $1.400 |
| 100+ | $1.280 |
| 500+ | $1.190 |
| 1000+ | $1.080 |
| 2500+ | $0.999 |
Price for:Each
Minimum: 1
Multiple: 1
$1.87
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSUD50P04-08-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.72R4258
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id50A
Drain Source On State Resistance8.1mohm
On Resistance Rds(on)0.0067ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd73.5W
Gate Source Threshold Voltage Max1V
Power Dissipation73.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (04-Feb-2026)
Product Overview
The SUD50P04-08-GE3 from Vishay is a surface mount, 40V P channel TrenchFET power MOSFET in TO-252 package. This device is used as power switch, DC to DC converters and load switch in high current applications.
- Drain to source voltage (Vds) of -40V
- Gate to source voltage of ±20V
- Continuous drain current (Id) of -50A
- Power dissipation (Pd) of 73.5W
- Low on state resistance of 9.7mohm at Vgs -4.5V
- Operating junction temperature range from -55°C to 150°C
Applications
Power Management, Consumer Electronics, Portable Devices, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
8.1mohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
P Channel
Continuous Drain Current Id
50A
On Resistance Rds(on)
0.0067ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
73.5W
Power Dissipation
73.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate