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SQ9945CEY-T1_GE3
MOSFET, DUAL N-CH, 60V, 5.4A, SOIC
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQ9945CEY-T1_GE3Copy
Manufacturer Standard Lead Time14 weeks
Newark Part No.51AM4748
Your Part Number
Available to Order
| Quantity | Price |
|---|---|
| 1+ | $1.400 |
| 10+ | $0.918 |
| 25+ | $0.825 |
| 50+ | $0.733 |
| 100+ | $0.640 |
| 250+ | $0.581 |
| 500+ | $0.521 |
| 1000+ | $0.482 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.40
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ9945CEY-T1_GE3Copy
Manufacturer Standard Lead Time14 weeks
Newark Part No.51AM4748
Channel TypeDual N Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel5.4A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.137ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel4W
Power Dissipation P Channel-
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
Dual N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
5.4A
Drain Source On State Resistance N Channel
0.137ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
4W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate