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SQ3419EV-T1_BE3
Power MOSFET, P Channel, 40 V, 6.9 A, 58 mohm, TSOP, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSQ3419EV-T1_BE3
Newark Part No.82AH6216
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
Packaging Options
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ3419EV-T1_BE3
Newark Part No.82AH6216
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id6.9A
On Resistance Rds(on)0.048ohm
Drain Source On State Resistance58mohm
Transistor Case StyleTSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation5W
Power Dissipation Pd5W
No. of Pins6Pins
Operating Temperature Max175°C
QualificationAEC-Q101
Product RangeTrenchFET Series
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (10-Jun-2022)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.048ohm
Transistor Case Style
TSOP
Rds(on) Test Voltage
10V
Power Dissipation
5W
No. of Pins
6Pins
Qualification
AEC-Q101
Automotive Qualification Standard
AEC-Q101
Transistor Polarity
P Channel
Continuous Drain Current Id
6.9A
Drain Source On State Resistance
58mohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
5W
Operating Temperature Max
175°C
Product Range
TrenchFET Series
SVHC
No SVHC (10-Jun-2022)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate