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SIZ260DT-T1-GE3
Dual MOSFET, N Channel, 80 V, 80 V, 24.7 A, 24.7 A, 0.0204 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIZ260DT-T1-GE3
Newark Part No.
Re-Reel42AH1983
Cut Tape42AH1983
Product RangeTrenchFET Gen IV Series
Your Part Number
Technical Datasheet
3,230 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.800 |
| 10+ | $1.140 |
| 25+ | $1.020 |
| 50+ | $0.892 |
| 100+ | $0.766 |
| 250+ | $0.686 |
| 500+ | $0.605 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZ260DT-T1-GE3
Newark Part No.
Re-Reel42AH1983
Cut Tape42AH1983
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel80V
Continuous Drain Current Id24.7A
Drain Source Voltage Vds P Channel80V
Drain Source Voltage Vds80V
Continuous Drain Current Id N Channel24.7A
Continuous Drain Current Id P Channel24.7A
Drain Source On State Resistance N Channel0.0204ohm
Drain Source On State Resistance P Channel0.0204ohm
Transistor Case StylePowerPAIR
No. of Pins8Pins
Power Dissipation N Channel33W
Power Dissipation P Channel33W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
SVHCLead
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
24.7A
Drain Source Voltage Vds
80V
Continuous Drain Current Id P Channel
24.7A
Drain Source On State Resistance P Channel
0.0204ohm
No. of Pins
8Pins
Power Dissipation P Channel
33W
Product Range
TrenchFET Gen IV Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
80V
Drain Source Voltage Vds P Channel
80V
Continuous Drain Current Id N Channel
24.7A
Drain Source On State Resistance N Channel
0.0204ohm
Transistor Case Style
PowerPAIR
Power Dissipation N Channel
33W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate