Print Page
Image is for illustrative purposes only. Please refer to product description.

ManufacturerVISHAY
Manufacturer Part NoSISS52DN-T1-GE3
Newark Part No.93AH0392
Product RangeTrenchFET Gen V
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 30 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.590 |
| 10+ | $1.010 |
| 25+ | $0.904 |
| 50+ | $0.797 |
| 100+ | $0.690 |
| 250+ | $0.619 |
| 500+ | $0.548 |
| 1000+ | $0.500 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.59
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS52DN-T1-GE3
Newark Part No.93AH0392
Product RangeTrenchFET Gen V
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id162A
On Resistance Rds(on)950µohm
Drain Source On State Resistance1200µohm
Transistor Case StylePowerPAK 1212-8S
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation57W
Power Dissipation Pd57W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen V
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
950µohm
Transistor Case Style
PowerPAK 1212-8S
Rds(on) Test Voltage
10V
Power Dissipation
57W
No. of Pins
8Pins
Product Range
TrenchFET Gen V
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
162A
Drain Source On State Resistance
1200µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
Power Dissipation Pd
57W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
