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SIHU5N50D-E3
Power MOSFET, N Channel, 500 V, 5.3 A, 1.2 ohm, TO-251, Through Hole
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No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHU5N50D-E3Copy
Newark Part No.99W9519
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id5.3A
Drain Source On State Resistance1.2ohm
On Resistance Rds(on)1.2ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd104W
Gate Source Threshold Voltage Max3V
Transistor Case StyleTO-251
Power Dissipation104W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
500V
Drain Source On State Resistance
1.2ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
104W
Transistor Case Style
TO-251
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
5.3A
On Resistance Rds(on)
1.2ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
Power Dissipation
104W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate