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SI7904BDN-T1-E3
Dual MOSFET, Dual N Channel, 20 V, 6 A, 0.03 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI7904BDN-T1-E3
Newark Part No.75M5570
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7904BDN-T1-E3
Newark Part No.75M5570
Technical Datasheet
Channel TypeDual N Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id6A
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel6A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.03ohm
Drain Source On State Resistance P Channel-
Transistor Case StylePowerPAK 1212
No. of Pins8Pins
Power Dissipation N Channel17.8W
Power Dissipation P Channel-
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (10-Jun-2022)
Technical Specifications
Channel Type
Dual N Channel
Continuous Drain Current Id
6A
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
6A
Drain Source On State Resistance N Channel
0.03ohm
Transistor Case Style
PowerPAK 1212
Power Dissipation N Channel
17.8W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (10-Jun-2022)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate