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SI7850ADP-T1-GE3
MOSFET, N-CH, 60V, 12A, POWERPAK SO
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ManufacturerVISHAY
Manufacturer Part NoSI7850ADP-T1-GE3
Newark Part No.50AC9667
Product RangeTrenchFET Gen IV
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Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7850ADP-T1-GE3
Newark Part No.50AC9667
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id12A
On Resistance Rds(on)0.016ohm
Drain Source On State Resistance0.0195ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Power Dissipation Pd35.7W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Power Dissipation35.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.016ohm
Transistor Case Style
PowerPAK SO
Power Dissipation Pd
35.7W
Gate Source Threshold Voltage Max
2.8V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
12A
Drain Source On State Resistance
0.0195ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
35.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
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