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SI7460DP-T1-GE3
Power MOSFET, N Channel, 60 V, 18 A, 0.0096 ohm, PowerPAK SO, Surface Mount
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No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7460DP-T1-GE3
Newark Part No.64R4909
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id18A
Drain Source On State Resistance0.0096ohm
On Resistance Rds(on)0.08ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd5.4W
Transistor Case StylePowerPAK SO
Gate Source Threshold Voltage Max1V
Power Dissipation5.4W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (10-Jun-2022)
Product Overview
The SI7460DP-T1-GE3 is an N-channel Fast Switching MOSFET features a new low thermal resistance PowerPAK® package with low 1.07mm profile.
- Halogen-free in according to IEC 61249-2-21 standard
Applications
Industrial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0096ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
5.4W
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
18A
On Resistance Rds(on)
0.08ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
PowerPAK SO
Power Dissipation
5.4W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (10-Jun-2022)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate