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SI7113DN-T1-GE3
Power MOSFET, P Channel, 100 V, 13.2 A, 0.134 ohm, PowerPAK 1212, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI7113DN-T1-GE3
Newark Part No.69W7263
Your Part Number
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7113DN-T1-GE3
Newark Part No.69W7263
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id13.2A
Drain Source On State Resistance0.134ohm
On Resistance Rds(on)0.119ohm
Transistor MountingSurface Mount
Power Dissipation Pd52W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Transistor Case StylePowerPAK 1212
Power Dissipation52W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (19-Jan-2021)
Product Overview
The SI7113DN-T1-GE3 is a 100VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for active clamp in intermediate DC-to-DC power supplies applications.
- Low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- Rg tested
- UIS tested
- Halogen-free
- -50 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.134ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
PowerPAK 1212
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
13.2A
On Resistance Rds(on)
0.119ohm
Power Dissipation Pd
52W
Gate Source Threshold Voltage Max
1V
Power Dissipation
52W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (19-Jan-2021)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
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