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SI7113DN-T1-E3
Power MOSFET, P Channel, 100 V, 13.2 A, 0.0145 ohm, PowerPAK 1212, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI7113DN-T1-E3
Newark Part No.22M8861
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7113DN-T1-E3
Newark Part No.22M8861
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id13.2A
Drain Source On State Resistance0.0145ohm
On Resistance Rds(on)0.0145ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Power Dissipation Pd3.7W
Gate Source Threshold Voltage Max3V
Transistor Case StylePowerPAK 1212
Power Dissipation3.7W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
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Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0145ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3.7W
Transistor Case Style
PowerPAK 1212
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
13.2A
On Resistance Rds(on)
0.0145ohm
Rds(on) Test Voltage
20V
Gate Source Threshold Voltage Max
3V
Power Dissipation
3.7W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate