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SI4487DY-T1-GE3
Power MOSFET, P Channel, 30 V, 11.6 A, 0.0205 ohm, SOIC, Surface Mount
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No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4487DY-T1-GE3Copy
Newark Part No.86R3887
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id11.6A
Drain Source On State Resistance0.0205ohm
On Resistance Rds(on)0.0165ohm
Transistor MountingSurface Mount
Power Dissipation Pd5W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.2V
Transistor Case StyleSOIC
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0205ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
11.6A
On Resistance Rds(on)
0.0165ohm
Power Dissipation Pd
5W
Gate Source Threshold Voltage Max
1.2V
Power Dissipation
5W
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate