Print Page
SI4431CDY-T1-GE3
Power MOSFET, P Channel, 30 V, 9 A, 0.032 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4431CDY-T1-GE3
Newark Part No.
Full Reel29X0533
Cut Tape16P3738
Your Part Number
2,500 In Stock
Need more?
Same day shipping
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.040 | $1.04 |
| Total Price | $1.04 | ||
Cut Tape
| Quantity | Price |
|---|---|
| 1+ | $1.040 |
| 10+ | $0.829 |
| 25+ | $0.828 |
| 50+ | $0.743 |
| 100+ | $0.658 |
| 250+ | $0.651 |
| 500+ | $0.643 |
Full Reel
| Quantity | Price |
|---|---|
| 2000+ | $0.487 |
| 4000+ | $0.438 |
| 6000+ | $0.422 |
| 10000+ | $0.413 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4431CDY-T1-GE3
Newark Part No.
Full Reel29X0533
Cut Tape16P3738
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id9A
On Resistance Rds(on)0.026ohm
Drain Source On State Resistance0.032ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd4.2W
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max2.5V
Power Dissipation4.2W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (10-Jun-2022)
Product Overview
The SI4431CDY-T1-GE3 is a 30VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and battery switch applications.
- 100% Rg tested
- -55 to 150°C Operating temperature range
- Halogen-free
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.026ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
4.2W
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
9A
Drain Source On State Resistance
0.032ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation
4.2W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (10-Jun-2022)
Technical Docs (3)
Alternatives for SI4431CDY-T1-GE3
2 Products Found
Associated Products
6 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate