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SI4178DY-T1-GE3
Power MOSFET, N Channel, 30 V, 12 A, 0.021 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 16 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.286 |
| 5000+ | $0.279 |
| 10000+ | $0.258 |
| 20000+ | $0.240 |
| 30000+ | $0.224 |
| 50000+ | $0.214 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$715.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4178DY-T1-GE3Copy
Newark Part No.86R3880
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id12A
On Resistance Rds(on)0.017ohm
Drain Source On State Resistance0.021ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd5W
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.4V
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.017ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
5W
Gate Source Threshold Voltage Max
1.4V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
12A
Drain Source On State Resistance
0.021ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation
5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate