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SI3437DV-T1-GE3
Power MOSFET, P Channel, 150 V, 1.4 A, 0.75 ohm, TSOP, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI3437DV-T1-GE3
Newark Part No.09X6426
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 10 week(s)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3437DV-T1-GE3
Newark Part No.09X6426
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id1.4A
On Resistance Rds(on)0.61ohm
Drain Source On State Resistance0.75ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd3.2W
Gate Source Threshold Voltage Max2V
Transistor Case StyleTSOP
Power Dissipation3.2W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product RangeTrenchFET Series
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.61ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3.2W
Transistor Case Style
TSOP
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
1.4A
Drain Source On State Resistance
0.75ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
Power Dissipation
3.2W
Operating Temperature Max
150°C
Product Range
TrenchFET Series
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate