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ManufacturerVISHAY
Manufacturer Part NoSI3430DV-T1-GE3
Newark Part No.26R1863
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 49 week(s)
Packaging Options
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| Quantity | Price |
|---|---|
| 1000+ | $0.675 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3430DV-T1-GE3
Newark Part No.26R1863
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id2.4A
Drain Source On State Resistance0.17ohm
On Resistance Rds(on)0.17ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd2W
Transistor Case StyleTSOP
Gate Source Threshold Voltage Max2V
Power Dissipation2W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.17ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2W
Gate Source Threshold Voltage Max
2V
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
2.4A
On Resistance Rds(on)
0.17ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TSOP
Power Dissipation
2W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate