Print Page
SI3430DV-T1-BE3
Power MOSFET, N Channel, 100 V, 1.8 A, 0.17 ohm, TSOP, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI3430DV-T1-BE3
Newark Part No.82AH6205
Product RangeSi3430DV Series
Your Part Number
Technical Datasheet
No Longer Available
Packaging Options
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3430DV-T1-BE3
Newark Part No.82AH6205
Product RangeSi3430DV Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1.8A
Drain Source On State Resistance0.17ohm
On Resistance Rds(on)0.148ohm
Transistor Case StyleTSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.2V
Power Dissipation Pd1.14W
Power Dissipation1.14W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product RangeSi3430DV Series
SVHCNo SVHC (23-Jan-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.17ohm
Transistor Case Style
TSOP
Rds(on) Test Voltage
10V
Power Dissipation Pd
1.14W
No. of Pins
6Pins
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Channel Type
N Channel
Continuous Drain Current Id
1.8A
On Resistance Rds(on)
0.148ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4.2V
Power Dissipation
1.14W
Operating Temperature Max
150°C
Product Range
Si3430DV Series
Technical Docs (3)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate