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SI2303CDS-T1-BE3
Power MOSFET, P Channel, 30 V, 2.7 A, 0.19 ohm, SOT-23, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI2303CDS-T1-BE3
Newark Part No.80AH8957
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2303CDS-T1-BE3
Newark Part No.80AH8957
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id2.7A
On Resistance Rds(on)0.158ohm
Drain Source On State Resistance0.19ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation Pd2.3W
Power Dissipation2.3W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
SVHCNo SVHC (07-Nov-2024)
Product Overview
Notes
BE3 suffix indicates non China production - not subject to US import tariffs
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.158ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation Pd
2.3W
No. of Pins
3Pins
Product Range
TrenchFET Series
SVHC
No SVHC (07-Nov-2024)
Transistor Polarity
P Channel
Continuous Drain Current Id
2.7A
Drain Source On State Resistance
0.19ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation
2.3W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate