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SI2302DDS-T1-GE3
MOSFET, N CH, 20V, 2.6A, SOT-23-3
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI2302DDS-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.40X8696
Your Part Number
14,648 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $0.450 |
| 25+ | $0.385 |
| 50+ | $0.311 |
| 100+ | $0.236 |
| 250+ | $0.230 |
| 500+ | $0.224 |
| 1000+ | $0.175 |
Price for:Each
Minimum: 5
Multiple: 5
$2.25
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2302DDS-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.40X8696
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.6A
Drain Source On State Resistance0.057ohm
On Resistance Rds(on)0.045ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd710mW
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max-
Power Dissipation710mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.057ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
710mW
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
2.6A
On Resistance Rds(on)
0.045ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Power Dissipation
710mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Alternatives for SI2302DDS-T1-GE3
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate