Print Page
SI1965DH-T1-GE3
MOSFET, DUAL, P-CH, 12V, 1.3A, SOT-363
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI1965DH-T1-GE3Copy
Manufacturer Standard Lead Time17 weeks
Newark Part No.
Full Reel86R3862
Re-Reel57AJ0428RL
Cut Tape57AJ0428
Product RangeTrench Series
Your Part Number
4,145 In Stock
Need more?
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $0.862 | $4.31 |
| Total Price | $4.31 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $0.862 |
| 50+ | $0.533 |
| 100+ | $0.345 |
| 250+ | $0.305 |
| 500+ | $0.264 |
| 1000+ | $0.238 |
| 2500+ | $0.221 |
| 5000+ | $0.204 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.237 |
| 9000+ | $0.172 |
| 15000+ | $0.169 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1965DH-T1-GE3Copy
Manufacturer Standard Lead Time17 weeks
Newark Part No.
Full Reel86R3862
Re-Reel57AJ0428RL
Cut Tape57AJ0428
Product RangeTrench Series
Channel TypeP Channel
Drain Source Voltage Vds N Channel12V
Drain Source Voltage Vds P Channel12V
Continuous Drain Current Id N Channel1.3A
Continuous Drain Current Id P Channel1.3A
Drain Source On State Resistance N Channel0.315ohm
Drain Source On State Resistance P Channel0.315ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel1.25W
Power Dissipation P Channel1.25W
Operating Temperature Max150°C
Product RangeTrench Series
Qualification-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds P Channel
12V
Continuous Drain Current Id P Channel
1.3A
Drain Source On State Resistance P Channel
0.315ohm
No. of Pins
6Pins
Power Dissipation P Channel
1.25W
Product Range
Trench Series
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds N Channel
12V
Continuous Drain Current Id N Channel
1.3A
Drain Source On State Resistance N Channel
0.315ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
1.25W
Operating Temperature Max
150°C
Qualification
-
Alternatives for SI1965DH-T1-GE3
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate