Print Page
SI1302DL-T1-GE3
Power MOSFET, N Channel, 30 V, 600 mA, 0.48 ohm, SC-70, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI1302DL-T1-GE3Copy
Newark Part No.57AJ0423
Product RangeTrenchFET Series
Your Part Number
1,257 In Stock
| Quantity | Price |
|---|---|
| 5+ | $0.794 |
| 10+ | $0.509 |
| 25+ | $0.455 |
| 50+ | $0.401 |
| 100+ | $0.347 |
| 250+ | $0.312 |
| 500+ | $0.276 |
| 1000+ | $0.254 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$3.97
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1302DL-T1-GE3Copy
Newark Part No.57AJ0423
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id600mA
On Resistance Rds(on)0.41ohm
Drain Source On State Resistance0.48ohm
Transistor Case StyleSC-70
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation Pd280mW
Power Dissipation280mW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.41ohm
Transistor Case Style
SC-70
Rds(on) Test Voltage
10V
Power Dissipation Pd
280mW
No. of Pins
3Pins
Product Range
TrenchFET Series
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
600mA
Drain Source On State Resistance
0.48ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation
280mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate