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IRLIZ44GPBF
Power MOSFET, N Channel, 60 V, 30 A, 0.028 ohm, TO-220FP, Through Hole
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995 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $4.040 |
| 10+ | $3.950 |
| 25+ | $2.360 |
| 50+ | $2.310 |
| 100+ | $2.260 |
| 500+ | $1.940 |
| 1000+ | $1.860 |
| 2500+ | $1.770 |
Price for:Each
Minimum: 1
Multiple: 1
$4.04
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRLIZ44GPBF
Newark Part No.63J7581
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id30A
On Resistance Rds(on)0.028ohm
Drain Source On State Resistance0.028ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage5V
Power Dissipation Pd48W
Transistor Case StyleTO-220FP
Gate Source Threshold Voltage Max2V
Power Dissipation48W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCTo Be Advised
Product Overview
The IRLIZ44GPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. The isolation is equivalent to using a 100 micron mica barrier with standard product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
- Isolated package
- 2.5kVRMS (t = 60s, f = 60Hz) High voltage isolation
- 4.8mm Sink to lead creepage distance
- Logic-level gate drive
- RDS (ON) Specified at VGS = 4 and 5V
- Ease of paralleling
Applications
Industrial, Power Management, Commercial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.028ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
48W
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Qualification
-
SVHC
To Be Advised
Channel Type
N Channel
Continuous Drain Current Id
30A
Drain Source On State Resistance
0.028ohm
Rds(on) Test Voltage
5V
Transistor Case Style
TO-220FP
Power Dissipation
48W
Operating Temperature Max
175°C
Product Range
-
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability