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IRLD014PBF
Power MOSFET, N Channel, 60 V, 1.7 A, 0.2 ohm, HVMDIP, Through Hole
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ManufacturerVISHAY
Manufacturer Part NoIRLD014PBF
Newark Part No.97K2342
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRLD014PBF
Newark Part No.97K2342
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id1.7A
On Resistance Rds(on)0.2ohm
Drain Source On State Resistance0.2ohm
Transistor Case StyleDIP
Transistor MountingThrough Hole
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max2V
Power Dissipation Pd1.3W
Power Dissipation1.3W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (10-Jun-2022)
Product Overview
Third generation power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
- Dynamic dV/dot rating
- For automatic insertion
- End stackable
- Logic-level gate drive
- Fast switching
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.2ohm
Transistor Case Style
DIP
Rds(on) Test Voltage
5V
Power Dissipation Pd
1.3W
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
1.7A
Drain Source On State Resistance
0.2ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
Power Dissipation
1.3W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (10-Jun-2022)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate