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IRF830APBF
Power MOSFET, N Channel, 500 V, 5 A, 1.4 ohm, TO-220, Through Hole
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170 In Stock
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $2.660 |
| 10+ | $1.810 |
| 25+ | $1.670 |
| 50+ | $1.520 |
| 100+ | $1.380 |
| 500+ | $1.260 |
| 1000+ | $1.220 |
Price for:Each
Minimum: 1
Multiple: 1
$2.66
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF830APBF
Newark Part No.63J7407
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id5A
Drain Source On State Resistance1.4ohm
On Resistance Rds(on)1.4ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd74W
Transistor Case StyleTO-220
Gate Source Threshold Voltage Max4.5V
Power Dissipation74W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The IRF830APBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- 150°C Operating temperature
- Easy to parallel
- Simple drive requirement
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
500V
Drain Source On State Resistance
1.4ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
74W
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
5A
On Resistance Rds(on)
1.4ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220
Power Dissipation
74W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
