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ManufacturerVISHAY
Manufacturer Part NoIRF730APBFCopy
Manufacturer Standard Lead Time84 weeks
Newark Part No.63J7377
Your Part Number
1,000 In Stock
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| Quantity | Price |
|---|---|
| 1000+ | $1.240 |
| 2500+ | $1.150 |
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Multiple: 1000
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF730APBFCopy
Manufacturer Standard Lead Time84 weeks
Newark Part No.63J7377
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds400V
Continuous Drain Current Id5.5A
On Resistance Rds(on)1ohm
Drain Source On State Resistance1ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd74W
Gate Source Threshold Voltage Max4.5V
Transistor Case StyleTO-220
Power Dissipation74W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead (19-Jan-2021)
Product Overview
The IRF730APBF is a N-channel enhancement-mode Power MOSFET with low gate charge.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche voltage and current
- Effective COSS specified
- Simple drive requirements
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
400V
On Resistance Rds(on)
1ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
74W
Transistor Case Style
TO-220
No. of Pins
3Pins
Qualification
-
SVHC
Lead (19-Jan-2021)
Transistor Polarity
N Channel
Continuous Drain Current Id
5.5A
Drain Source On State Resistance
1ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4.5V
Power Dissipation
74W
Operating Temperature Max
150°C
Product Range
-
Technical Docs (2)
Alternatives for IRF730APBF
3 Products Found
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
