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ManufacturerVISHAY
Manufacturer Part NoIRF614PBF
Newark Part No.63J7329
Your Part Number
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF614PBF
Newark Part No.63J7329
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id2.7A
Drain Source On State Resistance2ohm
On Resistance Rds(on)2ohm
Transistor MountingThrough Hole
Power Dissipation Pd36W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor Case StyleTO-220
Power Dissipation36W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The IRF614PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Ease of paralleling
- Simple drive requirements
Applications
Industrial, Power Management, Commercial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
250V
Drain Source On State Resistance
2ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
2.7A
On Resistance Rds(on)
2ohm
Power Dissipation Pd
36W
Gate Source Threshold Voltage Max
4V
Power Dissipation
36W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate