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IRF610PBF-BE3
Power MOSFET, N Channel, 200 V, 3.3 A, 1.5 ohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoIRF610PBF-BE3Copy
Manufacturer Standard Lead Time41 weeks
Newark Part No.78AH6377
Product RangeIRF610 Series
Your Part Number
535 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.230 |
| 10+ | $0.733 |
| 100+ | $0.659 |
| 500+ | $0.619 |
| 1000+ | $0.582 |
| 2500+ | $0.550 |
| 10000+ | $0.540 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF610PBF-BE3Copy
Manufacturer Standard Lead Time41 weeks
Newark Part No.78AH6377
Product RangeIRF610 Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id3.3A
Drain Source On State Resistance1.5ohm
On Resistance Rds(on)1.5ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation36W
Power Dissipation Pd36W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeIRF610 Series
Qualification-
SVHCLead
Product Overview
Notes
BE3 suffix indicates non China production - not subject to US import tariffs
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
1.5ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
36W
No. of Pins
3Pins
Product Range
IRF610 Series
SVHC
Lead
Transistor Polarity
N Channel
Continuous Drain Current Id
3.3A
On Resistance Rds(on)
1.5ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
36W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability