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ManufacturerVISHAY
Manufacturer Part No2N7002-T1-E3
Newark Part No.06J8892
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part No2N7002-T1-E3
Newark Part No.06J8892
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id115mA
On Resistance Rds(on)7.5ohm
Drain Source On State Resistance7.5ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd200mW
Transistor Case StyleTO-236
Gate Source Threshold Voltage Max2.1V
Power Dissipation200mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (23-Jan-2024)
Alternatives for 2N7002-T1-E3
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Product Overview
The 2N7002-T1-E3 is a 60V N-channel MOSFET with low on resistance and low threshold. Suitable for solid-state relays and TTL/CMOS direct logic-level interface.
- Low input capacitance
- Fast switching speed
- Low input and output leakage
- Low offset voltage
- Low error voltage
Applications
Power Management, Industrial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
7.5ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
200mW
Gate Source Threshold Voltage Max
2.1V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
115mA
Drain Source On State Resistance
7.5ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-236
Power Dissipation
200mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability