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BUZ905D
Power MOSFET, P Channel, 160 V, 16 A, 0.75 ohm, TO-3, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoBUZ905D
Newark Part No.96K7205
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoBUZ905D
Newark Part No.96K7205
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds160V
Continuous Drain Current Id16A
On Resistance Rds(on)0.75ohm
Drain Source On State Resistance0.75ohm
Rds(on) Test Voltage-
Transistor Case StyleTO-3
Transistor MountingThrough Hole
Power Dissipation Pd250W
Gate Source Threshold Voltage Max1.5V
Power Dissipation250W
No. of Pins2Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (15-Jan-2018)
Product Overview
The BUZ905D is a P-channel enhancement-mode Power MOSFET offers -160V drain source voltage and -16A continuous drain current.
- High speed switching
- Semefab designed and diffused
- High voltage
- High energy rating
- Integral protection diode
- BUZ900D complimentary P-channel
- Double die package for maximum power and heat-sink space
Applications
Power Management, Audio, Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
16A
Drain Source On State Resistance
0.75ohm
Transistor Case Style
TO-3
Power Dissipation Pd
250W
Power Dissipation
250W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Drain Source Voltage Vds
160V
On Resistance Rds(on)
0.75ohm
Rds(on) Test Voltage
-
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
1.5V
No. of Pins
2Pins
Qualification
-
MSL
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate