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TK3P50D,RQ(S
Power MOSFET, N Channel, 500 V, 3 A, 3 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTOSHIBA
Manufacturer Part NoTK3P50D,RQ(S
Newark Part No.72AK4495
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 24 week(s)
Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.670 |
| 10+ | $1.310 |
| 25+ | $1.200 |
| 50+ | $1.080 |
| 100+ | $0.969 |
| 250+ | $0.860 |
| 500+ | $0.685 |
| 1000+ | $0.647 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTK3P50D,RQ(S
Newark Part No.72AK4495
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id3A
Drain Source On State Resistance3ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.4V
Power Dissipation60W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Product Overview
The TK3P50D is a N-channel enhancement-mode Silicon MOSFET suitable for switching voltage regulator applications.
- Low drain-source ON-resistance
- 1S High forward transfer admittance
- 10μA Maximum low leakage current
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
60W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
500V
Drain Source On State Resistance
3ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4.4V
No. of Pins
3Pins
Product Range
-
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability