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TK1K0A60F,S4X(S
Power MOSFET, N Channel, 600 V, 7.5 A, 0.83 ohm, TO-220SIS, Through Hole
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No Longer Available
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTK1K0A60F,S4X(SCopy
Newark Part No.72AK4415
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id7.5A
Drain Source On State Resistance0.83ohm
Transistor Case StyleTO-220SIS
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation40W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
7.5A
Transistor Case Style
TO-220SIS
Rds(on) Test Voltage
10V
Power Dissipation
40W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.83ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability