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SSM6N61NU,LF(T
MOSFET, DUAL N-CHANNEL, 20V/4A, SOT-1118
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTOSHIBA
Manufacturer Part NoSSM6N61NU,LF(TCopy
Manufacturer Standard Lead Time16 weeks
Newark Part No.03AM3065
Your Part Number
630 In Stock
Need more?
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
| Quantity | Price |
|---|---|
| 5+ | $0.604 |
| 10+ | $0.464 |
| 25+ | $0.386 |
| 50+ | $0.323 |
| 100+ | $0.272 |
| 250+ | $0.231 |
| 500+ | $0.188 |
| 1000+ | $0.160 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$3.02
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoSSM6N61NU,LF(TCopy
Manufacturer Standard Lead Time16 weeks
Newark Part No.03AM3065
Channel TypeDual N Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel4A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.033ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-1118
No. of Pins6Pins
Power Dissipation N Channel1W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
Dual N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
SVHC
To Be Advised
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
4A
Drain Source On State Resistance N Channel
0.033ohm
Transistor Case Style
SOT-1118
Power Dissipation N Channel
1W
Operating Temperature Max
150°C
Qualification
-
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate